{"title":"Progress in the ITO/InP solar cell","authors":"T. Gessert, X. Li, M. Wanlass, T. Coutts","doi":"10.1109/ICIPRM.1990.203028","DOIUrl":null,"url":null,"abstract":"The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<>
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