{"title":"Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices","authors":"D. Gingrich, N. Buchanan, L. Chen, S. Liu","doi":"10.1109/REDW.2002.1045530","DOIUrl":null,"url":null,"abstract":"We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO/sub 2/)/s. An average total dose of 830 Gy(SiO/sub 2/) was absorbed by the FLEX 10KE and 330 Gy(SiO/sub 2/) by the Spartan-II before the power supply current increased.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2002.1045530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO/sub 2/)/s. An average total dose of 830 Gy(SiO/sub 2/) was absorbed by the FLEX 10KE and 330 Gy(SiO/sub 2/) by the Spartan-II before the power supply current increased.
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