A. Ionescu, S. Cristoloveanu, A. Rusu, A. Chovet, A. Hassein-bey
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引用次数: 4
Abstract
Although powerful device simulators are being developed, analytical models are still essential for depicting the underlying physical mechanisms. Recently, attention was paid to a "unified" approach able to account for MOSFET continuous operation from weak to moderate and strong inversion. In this paper, we propose an original model which applies not only to bulk Si and partially depleted SOI MOSFET's, but also to ultrathin film SOI transistors.<>
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