Weimin Wu, Xin Li, G. Gildenblat, G. Workman, S. Veeraraghavan, C. McAndrew, R. V. Langevelde, G. Smit, A. Scholten, D. Klaassen, J. Watts
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引用次数: 23
Abstract
This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance is included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies.
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