{"title":"A new quantum dot formation process using wet etching of poly-Si along grain boundaries","authors":"Seong-jong Yoo, Jongho Lee, Hyungcheol Shin","doi":"10.1109/IMNC.2000.872738","DOIUrl":null,"url":null,"abstract":"We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"58 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
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