N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson
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Abstract
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
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