{"title":"A MOS transistor array with pico-ampere order precision for accurate characterization of leakage current variation","authors":"T. Sato, H. Ueyama, N. Nakayama, K. Masu","doi":"10.1109/ASSCC.2008.4708809","DOIUrl":null,"url":null,"abstract":"Transistor array design for accurate sub-threshold current measurement is proposed. The proposed array achieves both compact layout area and pico-ampere order precision, which is particularly useful in off-state current variation characterization. The effect of masking current caused by the transistors that share the same measurement PAD is carefully eliminated using leakage cut-off switches and potential equalizing supply. Experimental array design consisting of 1023 low threshold voltage devices demonstrated accurate measurement of subthreshold leakage current with precision of 10-pA.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"13 11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Transistor array design for accurate sub-threshold current measurement is proposed. The proposed array achieves both compact layout area and pico-ampere order precision, which is particularly useful in off-state current variation characterization. The effect of masking current caused by the transistors that share the same measurement PAD is carefully eliminated using leakage cut-off switches and potential equalizing supply. Experimental array design consisting of 1023 low threshold voltage devices demonstrated accurate measurement of subthreshold leakage current with precision of 10-pA.
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