Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients

Abstract

The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.