J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter
{"title":"SEM Techniques for the Analysis of Memory Circuits","authors":"J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter","doi":"10.1109/IRPS.1980.362914","DOIUrl":null,"url":null,"abstract":"Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"436 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.