L. Dao, M. Johnston, M. Gal, L. Fu, H. Tan, C. Jagadish
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引用次数: 1
Abstract
Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells.
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