Monte Carlo analysis by direct measurement using Vth-shiftable SRAM cell TEG

Abstract

The measurement system in which the Monte Carlo analysis of SRAM operation can be performed in actual measurement using Vth-shiftable SRAM cell TEG (VTST) was developed. The dynamic Vth-shift circuit (DVSC) using electrolytic capacitors and mechanical relays for setting individual Vth-shift voltages for six MOSFETs in a memory cell enables to share a programmable external voltage source. The measured results of the Monte Carlo analysis for SRAM function test and the static noise margin evaluation were agreed well with the simulated results. The proposed method can compactly cope with the recently proposed SRAM with a larger number of transistors.