Iron doped semi-insulating GaInP lattice matched to GaAs for device fabrication

Abstract

I-V curves of semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe (E/sub g/=1.9 eV) with various Fe concentrations obtained at 125/spl deg/C are presented, The shapes of these curves are characteristic of the measurements made at 100 to 200/spl deg/C. The I-V behaviour of the material is different if Fe concentration is below or above 1.5/spl times/10/sup 17/ cm/sup -3/. Differential resistivity derived from these curves also exhibits a maximum at Fe=1.5/spl times/10/sup 17/ cm/sup -3/. These observations indicate that the cause of semi-insulation may be different below and above this concentration. It is suggested that Fe may be mostly site incorporated in the low concentration regime and mostly in the form of Fe-P complexes in the high concentration regime, A GaInP/GaInAsP/GaAs buried heterostructure with semi-insulating Ga/sub 0.51/In/sub 0.49/P:Fe regrowth has been fabricated for the first time to demonstrate the usefulness of the investigated material in device fabrication.