Double Side SiP of Structure Strength Analysis for 5G and Wearable Application

Mike Tsai, Wynn Li, Ethan Ding, Tim Chang, Kevin Chang, Karina Chang, Eric He, J. Chen, Rios Hsieh, Ryan Chiu, James Lin
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引用次数: 1

Abstract

The wearable devices demand small form factor and drive more function such as heartbeat detection, electrocardiogram detection functions, and sensors. Wearable device has become a small medical data center. Therefore, the design trend of wearable products requires smaller module size, multi-IC and component integration, low power consumption and better heat dissipation performance. The module size of the original Single Side SiP (System in Package) products cannot meet the next generation product, and Double Side SiP structure is expected to provide solutions for more diverse applications of wearable products in the future. The Double Side SiP structure can provide higher integration and performance. Package can be reduced to about 40~60% lighter and thinner to improve power supply efficiency and to reduce noise emission. This paper will demonstrate Double Side SiP of PKG structure with strip grinding process to check PKG die strength as a function of thickness. By using simulation and experiment, the ELK stress performance with 3-point test methodology is studied to select the suitable Double Side SiP structure for end product of board level manufacturing process. From electrical integration point of view, the shorter signal transmission path is required to get good electrical performance (SI: Signal Integrity & PI: Power Integrity) than a side by side flip chip base structure. The Double Side SiP module can provide an advanced solution to address the module size, cost, performance, and time-to-market requirement for 5G and wearable products in near future.The performance verification will be confirmed by simulation and measurement. The reliability testing verification includes the TCT, HTSL and u-HAST (Temperature Cycle Test, High Temperature Storage Test, un-bias HAST) results of the Double Side SiP structure. Finally, this paper summarizes Double Side SiP structure and feasibility data for future 5G and wearable devices application.
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面向5G及可穿戴应用的双面SiP结构强度分析
可穿戴设备需要小尺寸的外形,并驱动更多的功能,如心跳检测、心电图检测功能和传感器。可穿戴设备已经成为小型医疗数据中心。因此,可穿戴产品的设计趋势要求更小的模块尺寸,多ic和组件集成,低功耗和更好的散热性能。原有单端SiP (System in Package)产品的模块尺寸无法满足下一代产品的需求,双端SiP结构有望为未来可穿戴产品更多样化的应用提供解决方案。双面SiP结构可以提供更高的集成度和性能。封装可以减少到约40~60%的重量和厚度,以提高供电效率和降低噪音排放。本文将演示带磨削PKG结构的双面SiP,以校核PKG模具强度随厚度的函数。采用仿真和实验相结合的方法,采用三点测试法对ELK应力性能进行了研究,为板级制造工艺的最终产品选择合适的双面SiP结构。从电气集成的角度来看,与并排倒装芯片基础结构相比,需要更短的信号传输路径来获得良好的电气性能(SI:信号完整性和PI:功率完整性)。双面SiP模块可以为解决未来5G和可穿戴产品在模块尺寸、成本、性能和上市时间等方面的需求提供先进的解决方案。性能验证将通过仿真和测量进行验证。可靠性测试验证包括双侧SiP结构的TCT、HTSL和u-HAST(温度循环测试、高温储存测试、无偏置HAST)结果。最后总结了双面SiP的结构和未来5G及可穿戴设备应用的可行性数据。
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