Simulation of magnetotransport in nanoscale devices

Sung-Min Hong, C. Jungemann
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引用次数: 4

Abstract

The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n+nn+ device is simulated and a strong impact of the maximum number of spherical harmonics on the simulation result is found.
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纳米级器件中磁输运的模拟
玻尔兹曼方程采用球面谐波展开法求解,其中包含一个与实际空间中二维模拟平面垂直的磁力。该方法被用于验证一种提取SiGe HBTs电子少数派迁移率的方法。对硅n+nn+器件中的磁输运进行了模拟,发现最大球次谐波数对模拟结果有较大影响。
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