On Handling Memory Scan Chains

Surbhi Bansal, Aviansh Mendhalkar, R. Tekumalla
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Abstract

Memories from the Library vendor come as a hard macro in the design. With the increased focus on meeting timing requirements, memories are provided in an integrated form from vendor. These integrated memory hard macros not only consist of SRAM read-write behavior but also comprise of scan chains and bypass logic around SRAM. This bypass logic consists of shadow cells which are already stitched into small scan chains inside the hard macro. Since this whole memory bypass and shadow logic is inside hard macro, it can be treated as a separate timing closed module in the design. Because of the separate timing closure process, there can be an occurrence of timing violation during silicon test on the logic interface between the SoC and the hard macro. There is a need to have an optional mode where designer should have freedom to generate the patterns with or without consideration of the capture mode of the memory scan cells. In this paper, we present a methodology to handle memory scan chains by controlling the memory clock during capture, using a combination of control signals which already exist in the design.
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关于处理内存扫描链
来自库供应商的内存在设计中作为硬宏出现。随着对满足时间要求的日益关注,存储器以集成形式由供应商提供。这些集成的内存硬宏不仅包括SRAM读写行为,还包括SRAM周围的扫描链和旁路逻辑。这种旁路逻辑由阴影细胞组成,这些阴影细胞已经缝合到硬宏内部的小扫描链中。由于整个内存旁路和阴影逻辑都在硬宏内部,因此在设计中可以将其视为单独的时序封闭模块。由于单独的时序关闭过程,在SoC和硬宏之间的逻辑接口的硅测试过程中可能会发生时序冲突。需要有一种可选模式,在这种模式下,设计人员应该可以自由地生成模式,无论是否考虑内存扫描单元的捕获模式。在本文中,我们提出了一种方法,通过在捕获期间控制内存时钟来处理内存扫描链,使用设计中已经存在的控制信号的组合。
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