A Procedure to Reduce Cell Variation in Phase Change Memory for Improving Multi-Level-Cell Performances

W. Khwa, J. Y. Wu, T. Su, M. Lee, H. Li, Y. Chen, M. BrightSky, T. Wang, T. Hsu, P. Du, W. Chien, S. Kim, H. Cheng, E. Lai, Y. Zhu, M. Chang, H. Lung, C. Lam
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引用次数: 2

Abstract

Inherent cell variation of phase change memory is difficult to control by material or device engineering alone. We previously reported R-I curve shift detection scheme as a good method for monitoring PCM cell characteristics. This paper extends that concept and proposes a Stress-trim procedure to tighten R-I characteristics for PCM MLC operation. By leveraging the right-shift phenomena of PCM R-I curves, we demonstrated that Stress-trim can effectively reduce cell variation to improve MLC performance. A MLC program current amplitude range reduction of 40% and MLC time to failure extension of nearly 150X are achieved.
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一种减少相变存储器中单元变化以提高多电平单元性能的方法
相变存储器的固有细胞变异是难以通过材料或器件工程单独控制的。我们以前报道过R-I曲线移位检测方案是监测PCM细胞特性的好方法。本文扩展了这一概念,并提出了一种应力修剪程序来收紧PCM MLC操作的R-I特性。通过利用PCM R-I曲线的右移现象,我们证明应力修剪可以有效地减少细胞变异以提高MLC性能。实现了MLC程序电流幅度范围减小40%,MLC失效时间延长近150倍。
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