C. Maneux, J. Goguet, S. Frégonèse, T. Zimmer, H. C. d’Honincthun, S. Galdin-Retailleau
{"title":"Analysis of CNTFET physical compact model","authors":"C. Maneux, J. Goguet, S. Frégonèse, T. Zimmer, H. C. d’Honincthun, S. Galdin-Retailleau","doi":"10.1109/DTIS.2006.1708733","DOIUrl":null,"url":null,"abstract":"On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the DC characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits","PeriodicalId":399250,"journal":{"name":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2006.1708733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40
Abstract
On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the DC characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits
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