A test chip for MOS transistor capacitance characterization

Abstract

We present test chip for the capacitive characterization of MOS transistors. It allows one to measure accurately capacitances of the transistor and to identify the various components (i.e. gate-source, gate-bulk and gate-drain). From capacitance measurements, it is then possible to determine effective dimensions of the transistor (length and width) as well as gate oxide thickness. As Test Structures enable the measurement of very small capacitances, minimum dimension transistors are studied.