Efficient Monte Carlo device simulation with automatic error control

Abstract

A single-particle approach to Monte Carlo device simulation is presented where the simulation is stopped when the error for the drain, substrate or gate current is below a predefined error bar. This is achieved by alternating an ensemble simulation in the contact elements, used for the injection of a carrier, with a single-particle simulation in the active device area, thus enabling stochastically independent current estimates. Together with efficient Monte Carlo techniques, leading to CPU times of typically one hour per bias point, this makes full-band Monte Carlo "affordable" for the simulation of submicron MOSFETs.