{"title":"Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum","authors":"M. Tanabe, M. Goto, A. Uedono, K. Yamabe","doi":"10.1109/IWGI.2003.159173","DOIUrl":null,"url":null,"abstract":"Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.
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