{"title":"A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology","authors":"Kefei Wu, B. Fahs, M. Hella","doi":"10.1109/BCICTS.2018.8550896","DOIUrl":null,"url":null,"abstract":"This paper presents a novel 220 GHz transmitter based on on-off keying (OOK) modulation in 130 nm SiGe BiCMOS process. An outphasing architecture is explored for the first time beyond 200 GHz to enable the use of nonlinear power amplifier-multiplier chains (AMC) while supporting nonconstant envelope modulation schemes. The transmitter consists of a high speed outphasing modulator and two identical power amplifier frequency doubler chains. The modulator modulates the phase difference of two parallel signal paths between 0° and 90° through a double-pole double-throw (DPDT) switch and two fixed-value phase shifters. A −2 dBm continuous wave output power is measured at 220 GHz with a 3-dB bandwidth of 20 GHz. A data rate of 8 Gb/s is reported at a total DC power consumption of 380 mW.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents a novel 220 GHz transmitter based on on-off keying (OOK) modulation in 130 nm SiGe BiCMOS process. An outphasing architecture is explored for the first time beyond 200 GHz to enable the use of nonlinear power amplifier-multiplier chains (AMC) while supporting nonconstant envelope modulation schemes. The transmitter consists of a high speed outphasing modulator and two identical power amplifier frequency doubler chains. The modulator modulates the phase difference of two parallel signal paths between 0° and 90° through a double-pole double-throw (DPDT) switch and two fixed-value phase shifters. A −2 dBm continuous wave output power is measured at 220 GHz with a 3-dB bandwidth of 20 GHz. A data rate of 8 Gb/s is reported at a total DC power consumption of 380 mW.
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