{"title":"Electromigration reliability of Cu interconnects and the impact of low-k dielectrics","authors":"P. Ho, K.-D. Lee, E. Ogawa, X. Lu, H. Matsuhashi","doi":"10.1109/IPFA.2003.1222739","DOIUrl":null,"url":null,"abstract":"Electromigration (EM) reliability in Cu dual-damascene structures integrated with oxide and low-k ILD was investigated using a statistical approach. This approach is efficient in addressing early failures using multi-link structures to sample very large number of interconnect elements. In this paper, we summarize results first on early failures of Cu/oxide structures, then EM characteristics of Cu/low-k structures are discussed and compared with Cu/oxide structures. The integration of low-k ILD was found to degrade EM performance and to induce a new failure mechanism. These results can be attributed to the thermomechanical properties of the low-k ILD and its implication on EM reliability will be discussed.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Electromigration (EM) reliability in Cu dual-damascene structures integrated with oxide and low-k ILD was investigated using a statistical approach. This approach is efficient in addressing early failures using multi-link structures to sample very large number of interconnect elements. In this paper, we summarize results first on early failures of Cu/oxide structures, then EM characteristics of Cu/low-k structures are discussed and compared with Cu/oxide structures. The integration of low-k ILD was found to degrade EM performance and to induce a new failure mechanism. These results can be attributed to the thermomechanical properties of the low-k ILD and its implication on EM reliability will be discussed.