{"title":"Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications","authors":"N. K. Jha, M.S. Baghini, V. Rao","doi":"10.1109/IPFA.2002.1025608","DOIUrl":null,"url":null,"abstract":"The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.
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