{"title":"An advanced bipolar device-the fully depleted camel structure","authors":"A. Al-Bustani, N. M. Yaseen","doi":"10.1109/ICECS.1996.584553","DOIUrl":null,"url":null,"abstract":"Camel devices are advanced bipolar structures with fully depleted base layers. In this paper, an analysis is presented to study these new devices and to account for the effect(s) of design parameters such as the intermediate layer width, the emitter doping density and effective length on the devices' performance. The results obtained show a strong dependence of the transistor characteristics on the design parameters.","PeriodicalId":402369,"journal":{"name":"Proceedings of Third International Conference on Electronics, Circuits, and Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Third International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.1996.584553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Camel devices are advanced bipolar structures with fully depleted base layers. In this paper, an analysis is presented to study these new devices and to account for the effect(s) of design parameters such as the intermediate layer width, the emitter doping density and effective length on the devices' performance. The results obtained show a strong dependence of the transistor characteristics on the design parameters.
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