{"title":"Back-gate controlled READ SRAM with improved stability","authors":"Jae-Joon Kim, Keunwoo Kim, C. Chuang","doi":"10.1109/SOI.2005.1563591","DOIUrl":null,"url":null,"abstract":"We have presented a novel back-gate controlled UTSOI SRAM cell structure and associated design considerations. The proposed scheme offers improved stability compared with conventional 6T cell, and has less number of transistors than the conventional 10T cell. Due to over 3/spl times/ improvement in SNM even at low VDD and reduced area penalty compared with 10T cell, the proposed 8T cell could be aggressively scaled down. This scheme can also be applied to SRAM cells with asymmetrical DG devices.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We have presented a novel back-gate controlled UTSOI SRAM cell structure and associated design considerations. The proposed scheme offers improved stability compared with conventional 6T cell, and has less number of transistors than the conventional 10T cell. Due to over 3/spl times/ improvement in SNM even at low VDD and reduced area penalty compared with 10T cell, the proposed 8T cell could be aggressively scaled down. This scheme can also be applied to SRAM cells with asymmetrical DG devices.
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