Improving bandwidth and error rate in flash converters

C. Mangelsdorf
{"title":"Improving bandwidth and error rate in flash converters","authors":"C. Mangelsdorf","doi":"10.1109/VLSIC.1989.1037485","DOIUrl":null,"url":null,"abstract":"To achieve high input bandwidth, the flash architecture of Figure 1 vas used. A preamp buffers each of the 257 latching comparators improving dynamic response and isolating the input and reference ladder from snitching transients. Dual supplies (+SV and -5.2V) are used to provide a convenient ground centered input span with large over-range capability. The extra headroom afforded by dual supplies permits a large rwerse bias on the collector-base junctions of the input transistors. This avoids the distortion caused by voltage dependent input capacitance found in single supply flash ADCs.[l] A special form of cascode reduces Miller capacitance loading of the input pair wbile maintaining high switching speed. The small physical siie of the input devices (5.5 x 1.0 um emitters) leads to a tiny input capacitance of ZOpF, and contributes to high input bandwidth.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

To achieve high input bandwidth, the flash architecture of Figure 1 vas used. A preamp buffers each of the 257 latching comparators improving dynamic response and isolating the input and reference ladder from snitching transients. Dual supplies (+SV and -5.2V) are used to provide a convenient ground centered input span with large over-range capability. The extra headroom afforded by dual supplies permits a large rwerse bias on the collector-base junctions of the input transistors. This avoids the distortion caused by voltage dependent input capacitance found in single supply flash ADCs.[l] A special form of cascode reduces Miller capacitance loading of the input pair wbile maintaining high switching speed. The small physical siie of the input devices (5.5 x 1.0 um emitters) leads to a tiny input capacitance of ZOpF, and contributes to high input bandwidth.
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改进闪存转换器的带宽和错误率
为了实现高输入带宽,使用了图1所示的闪存架构。前置放大器缓冲257个锁存比较器中的每一个,改善动态响应并隔离输入和参考阶梯,使其不受开关瞬态的影响。双电源(+SV和-5.2V)用于提供方便的地中心输入跨度,具有大的超量程能力。双电源提供的额外净空允许输入晶体管的集电极-基极结产生较大的反向偏置。这避免了由电压相关输入电容引起的失真,在单电源闪存adc中发现。[1]一种特殊形式的级联码在保持高开关速度的同时减少了输入对的米勒电容负载。输入器件的小物理尺寸(5.5 x 1.0 um发射器)导致ZOpF的微小输入电容,并有助于高输入带宽。
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