A 10 b 10 MHz triple-stage Bi-CMOS A/D converter

A. Matsuzawa, M. Kagawa, M. Kanoh, S. Tada, S. Nakashima, K. Tatehara, K. Shimizu
{"title":"A 10 b 10 MHz triple-stage Bi-CMOS A/D converter","authors":"A. Matsuzawa, M. Kagawa, M. Kanoh, S. Tada, S. Nakashima, K. Tatehara, K. Shimizu","doi":"10.1109/VLSIC.1990.111082","DOIUrl":null,"url":null,"abstract":"The 10-b, 10 MHz BiCMOS A/D (analog-to-digital) converter with a triple-stage conversion scheme, combined with two novel conversion schemes, the dynamic sliding reference method and the triangular interpolation method, has been developed. This novel conversion scheme and BiCMOS circuit technology reduce element counts of bipolar transistors to only 2000. A small active area of 2.5×2.7 mm2 and a low power dissipation of 350 mW with an acceptable SNR (signal-to-noise ratio) of 54 dB including internal sample/hold and reference voltage circuit have been achieved","PeriodicalId":239990,"journal":{"name":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1990.111082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The 10-b, 10 MHz BiCMOS A/D (analog-to-digital) converter with a triple-stage conversion scheme, combined with two novel conversion schemes, the dynamic sliding reference method and the triangular interpolation method, has been developed. This novel conversion scheme and BiCMOS circuit technology reduce element counts of bipolar transistors to only 2000. A small active area of 2.5×2.7 mm2 and a low power dissipation of 350 mW with an acceptable SNR (signal-to-noise ratio) of 54 dB including internal sample/hold and reference voltage circuit have been achieved
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一个10b 10mhz三级双cmos A/D转换器
结合动态滑动参考法和三角插值法两种新颖的转换方案,研制了采用三级转换方案的10-b、10 MHz BiCMOS模数转换器。这种新颖的转换方案和BiCMOS电路技术将双极晶体管的元件数量减少到2000个。实现了2.5 × 2.7 mm2的小有源面积和350 mW的低功耗,可接受的信噪比(信噪比)为54 dB,包括内部采样/保持和参考电压电路
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