Multi beam low-k grooving evaluation of various removal principals

Abstract

Over the years the singulation of semiconductor wafers with a low-k top structures has become a challenge in the production process of integrated circuits. With the traditional blade dicing process serious yield issues are encountered. These problems can be addressed by applying a laser grooving process before the blade dicing. However, these processes are slow or generate a significant heat impact on the wafer. In this article the special ALSI multi beam technology is presented which makes a high productivity grooving process possible with a very limited heat affected zone.