Richard van der Stam, Jeroen van Borkulo, P. Dijkstra
Over the years the singulation of semiconductor wafers with a low-k top structures has become a challenge in the production process of integrated circuits. With the traditional blade dicing process serious yield issues are encountered. These problems can be addressed by applying a laser grooving process before the blade dicing. However, these processes are slow or generate a significant heat impact on the wafer. In this article the special ALSI multi beam technology is presented which makes a high productivity grooving process possible with a very limited heat affected zone.
{"title":"Multi beam low-k grooving evaluation of various removal principals","authors":"Richard van der Stam, Jeroen van Borkulo, P. Dijkstra","doi":"10.4071/ISOM-2013-WA53","DOIUrl":"https://doi.org/10.4071/ISOM-2013-WA53","url":null,"abstract":"Over the years the singulation of semiconductor wafers with a low-k top structures has become a challenge in the production process of integrated circuits. With the traditional blade dicing process serious yield issues are encountered. These problems can be addressed by applying a laser grooving process before the blade dicing. However, these processes are slow or generate a significant heat impact on the wafer. In this article the special ALSI multi beam technology is presented which makes a high productivity grooving process possible with a very limited heat affected zone.","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126435014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Because of the phase out of CFC's and HCFC's, standard solder pastes and fluxes evolved from RA and RMA fluxes, to No-Clean, low residue No-Clean, and very low residue No-Clean. Many companies came out with their cleaning solutions, aqueous and semi-aqueous, with each product release being more innovative than the previous one. Unfortunately for most of the suppliers of cleaners, two other trends appeared; lead-free soldering and the progressive miniaturization of electronic devices. Traditional chemicals like CFC's, HCFC's, brominated solvents, detergents and glycols cannot do a good cleaning job anymore because most flux formulations have changed. Also, assembly processes have been modified due to smaller components and more compact board assemblies. The world is composed of two main things: organics and inorganics. Organics are made of resins and activators, whereas inorganics are made of salts, metallic salts and fillers. Cleaning performance is affected by three main criteria. The first involves the Hansen Parameters which is a characterization of a contaminant to be dissolved and can be simplified by the solvency power of a product also known as the Kauri Butanol Index (KB Index). The second is surface tension, expressed in mN/m. This parameter must be considered because when the cleaning product cannot make contact with the contaminants under or around components, the contaminants cannot be dissolved. The third criteria are the physical parameters like temperature, mechanical activities, and the process cyle. The mastery to manage all of these parameters while facing high-tech miniaturization and environmental regulations, like ROHS, REACH, etc. brings innovation to cleaning in this electronic world.
{"title":"Cleaning in electronics: Understanding today's needs","authors":"P. Duchi, Anne-Marie Laügt, Marie Verdier","doi":"10.4071/isom-Poster1","DOIUrl":"https://doi.org/10.4071/isom-Poster1","url":null,"abstract":"Because of the phase out of CFC's and HCFC's, standard solder pastes and fluxes evolved from RA and RMA fluxes, to No-Clean, low residue No-Clean, and very low residue No-Clean. Many companies came out with their cleaning solutions, aqueous and semi-aqueous, with each product release being more innovative than the previous one. Unfortunately for most of the suppliers of cleaners, two other trends appeared; lead-free soldering and the progressive miniaturization of electronic devices. Traditional chemicals like CFC's, HCFC's, brominated solvents, detergents and glycols cannot do a good cleaning job anymore because most flux formulations have changed. Also, assembly processes have been modified due to smaller components and more compact board assemblies. The world is composed of two main things: organics and inorganics. Organics are made of resins and activators, whereas inorganics are made of salts, metallic salts and fillers. Cleaning performance is affected by three main criteria. The first involves the Hansen Parameters which is a characterization of a contaminant to be dissolved and can be simplified by the solvency power of a product also known as the Kauri Butanol Index (KB Index). The second is surface tension, expressed in mN/m. This parameter must be considered because when the cleaning product cannot make contact with the contaminants under or around components, the contaminants cannot be dissolved. The third criteria are the physical parameters like temperature, mechanical activities, and the process cyle. The mastery to manage all of these parameters while facing high-tech miniaturization and environmental regulations, like ROHS, REACH, etc. brings innovation to cleaning in this electronic world.","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122630695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Key requirements on die attach materials for most MEMS packages include high flexibility. The reason for this is that temperature changes during the assembly process and application may lead to thermo-mechanical stress as a consequence of thermal mismatch (dissimilar coefficients of thermal expansion of substrate, chip and adhesive). Distortion of the signal characteristics of the extremely stress-sensitive MEMS device is the consequence of this thermo-mechanical stress. The newly developed adhesives provide an outstanding combination of high flexibility and high die shear strength, giving them a competitive edge over the currently used MEMS die attach adhesives. This paper describes highly flexible heat-curing adhesives on the basis of acrylates and the patented mCD chemistry with a Young's modulus down to 5 MPa at room temperature. DMTA measurements show that temperature storage at +120 °C does not cause adhesive embrittlement, which would have a negative effect on the MEMS package's reliability. The curing temperatures of these adhesives are extremely low down to +100 °C, which reduces stress development during the assembly process. In addition, the adhesives have very process-friendly properties with processing times of one week. The option of dual curing enables preliminary light fixation of the chip within just seconds.
{"title":"Highly flexible die attach adhesives for MEMS packages","authors":"Tobias Koniger","doi":"10.4071/ISOM-2012-THP51","DOIUrl":"https://doi.org/10.4071/ISOM-2012-THP51","url":null,"abstract":"Key requirements on die attach materials for most MEMS packages include high flexibility. The reason for this is that temperature changes during the assembly process and application may lead to thermo-mechanical stress as a consequence of thermal mismatch (dissimilar coefficients of thermal expansion of substrate, chip and adhesive). Distortion of the signal characteristics of the extremely stress-sensitive MEMS device is the consequence of this thermo-mechanical stress. The newly developed adhesives provide an outstanding combination of high flexibility and high die shear strength, giving them a competitive edge over the currently used MEMS die attach adhesives. This paper describes highly flexible heat-curing adhesives on the basis of acrylates and the patented mCD chemistry with a Young's modulus down to 5 MPa at room temperature. DMTA measurements show that temperature storage at +120 °C does not cause adhesive embrittlement, which would have a negative effect on the MEMS package's reliability. The curing temperatures of these adhesives are extremely low down to +100 °C, which reduces stress development during the assembly process. In addition, the adhesives have very process-friendly properties with processing times of one week. The option of dual curing enables preliminary light fixation of the chip within just seconds.","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121581043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1007/978-3-319-21194-7_4
K. Aasmundtveit, B. Q. Ta, Quoc Nguyen, Tormod B. Haugen, N. Hoivik, E. Halvorsen
{"title":"Direct integration of Carbon Nanotubes in Si microsystems — Towards truly integrated micro/nano systems","authors":"K. Aasmundtveit, B. Q. Ta, Quoc Nguyen, Tormod B. Haugen, N. Hoivik, E. Halvorsen","doi":"10.1007/978-3-319-21194-7_4","DOIUrl":"https://doi.org/10.1007/978-3-319-21194-7_4","url":null,"abstract":"","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131377158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The high-temperature joining process is a key technology for electronic components and assemblies of automotive and other high-temperature applications. Recently, focusing on a sintering behavior of metal particles, the joining process using metal particles has been proposed as a solder alternative to establish a new joining technology for high-temperature applications. In this study, mixed Ag particle pastes were experimentally applied and the effect of the addition of Ag nanoparticles into micro-sized Ag particles on the joint strength has been studied to improve joint strength using Ag particle paste. Then, the effect of joining atmosphere on the joint strength of Cu-to-Cu joint using mixed Ag particle paste has been investigated.
{"title":"Joint strength of Cu-to-Cu joint using mixed Ag particle paste","authors":"H. Nishikawa, K. Niwa","doi":"10.2207/QJJWS.33.75S","DOIUrl":"https://doi.org/10.2207/QJJWS.33.75S","url":null,"abstract":"The high-temperature joining process is a key technology for electronic components and assemblies of automotive and other high-temperature applications. Recently, focusing on a sintering behavior of metal particles, the joining process using metal particles has been proposed as a solder alternative to establish a new joining technology for high-temperature applications. In this study, mixed Ag particle pastes were experimentally applied and the effect of the addition of Ag nanoparticles into micro-sized Ag particles on the joint strength has been studied to improve joint strength using Ag particle paste. Then, the effect of joining atmosphere on the joint strength of Cu-to-Cu joint using mixed Ag particle paste has been investigated.","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130195435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.31399/asm.cp.istfa2019p0009
J. Alton, M. Igarashi
Traditional, all electronic, microwave time domain reflectometry (TDR) is a well established fault isolation technique within the semiconductor industry and can typically localize an open or short fault to within 500μm of the defect. This level of fault localization is not sufficient in advanced IC packages due to the increased complexity and the reduction in physical package size, hence, the ability to isolate the exact fault location is essential to shorten the failure analysis cycle time. Electro optical terahertz pulse reflectometry (EOTPR) is a novel and innovative technique which offers the ability to quickly and non-destructively isolate faults in advanced IC packages to an accuracy of 20μm or better. The EOTPR system uses photoconductive terahertz pulse generation and detection technology, resulting in a system with: (i) high measurement bandwidth, (ii) extremely low time base jitter, and (iii) high time base resolution and range with greater sensitivity. Here, an EOTPR system is used to non-destructively isolate faults in a series of state-of-the-art IC packages. We present results which demonstrate the superior accuracy and sensitivity of EOTPR compared to traditional TDR.
{"title":"Non-destructive fault localization in advanced IC packages using electro optical terahertz pulse reflectometry","authors":"J. Alton, M. Igarashi","doi":"10.31399/asm.cp.istfa2019p0009","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0009","url":null,"abstract":"Traditional, all electronic, microwave time domain reflectometry (TDR) is a well established fault isolation technique within the semiconductor industry and can typically localize an open or short fault to within 500μm of the defect. This level of fault localization is not sufficient in advanced IC packages due to the increased complexity and the reduction in physical package size, hence, the ability to isolate the exact fault location is essential to shorten the failure analysis cycle time. Electro optical terahertz pulse reflectometry (EOTPR) is a novel and innovative technique which offers the ability to quickly and non-destructively isolate faults in advanced IC packages to an accuracy of 20μm or better. The EOTPR system uses photoconductive terahertz pulse generation and detection technology, resulting in a system with: (i) high measurement bandwidth, (ii) extremely low time base jitter, and (iii) high time base resolution and range with greater sensitivity. Here, an EOTPR system is used to non-destructively isolate faults in a series of state-of-the-art IC packages. We present results which demonstrate the superior accuracy and sensitivity of EOTPR compared to traditional TDR.","PeriodicalId":338701,"journal":{"name":"2013 Eurpoean Microelectronics Packaging Conference (EMPC)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128016759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：