{"title":"Avalanche multiplication in a compact bipolar transistor model for circuit simulation","authors":"W. Kloosterman, H. de Graaff","doi":"10.1109/BIPOL.1988.51056","DOIUrl":null,"url":null,"abstract":"Weak avalanche in bipolar transistors can be accurately modeled by using the collector depletion capacitance. This model has the advantages of a relatively fast numerical evaluation and an easily extracted avalanche parameter. The model incorporates internal voltage drop and temperature dependence and can be implemented in any compact bipolar transistor model.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"49","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 49
Abstract
Weak avalanche in bipolar transistors can be accurately modeled by using the collector depletion capacitance. This model has the advantages of a relatively fast numerical evaluation and an easily extracted avalanche parameter. The model incorporates internal voltage drop and temperature dependence and can be implemented in any compact bipolar transistor model.<>
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