Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

H. Shiraki, Y. Tokuda, K. Sassa
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Abstract

The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors.
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n型块体砷化镓双稳中深中心的电子发射和俘获动力学
利用等温恒容电压瞬态光谱(CCVTS)研究了EL5和EL6之间的相互作用。在长距离充注脉冲持续时间内,观察到EL5和EL6两个陷阱组分的CCVTS峰高与充注时间的异常关系。一个EL6成分的减少几乎等于一个EL5成分的增加。这种变化可以通过控制这些陷阱的电子占据分数来逆转。基于双稳态反应模型的速率方程计算可以很好地解释这些特征行为。
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