A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C

J. Pathrose, L. Zou, K. Chai, M. Je, Y. Xu
{"title":"A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C","authors":"J. Pathrose, L. Zou, K. Chai, M. Je, Y. Xu","doi":"10.1109/ASSCC.2013.6691010","DOIUrl":null,"url":null,"abstract":"This paper presents a smart temperature sensor operating over a wide temperature range from 25°C-225°C. The proposed smart temperature sensor eliminates the explicit bandgap reference and only requires the ratio of two diode voltages to obtain ratiometric temperature measurements. The temperature sensor is implemented with a simple time-domain architecture, resulting in low power consumption and small chip area. Fabricated in a PDSOI CMOS process, the proposed smart temperature sensor achieves an accuracy of 2°C over 25°C-225°C and consumes only 25-μA current under a 4.5-V supply with a chip area of 0.45mm2.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

This paper presents a smart temperature sensor operating over a wide temperature range from 25°C-225°C. The proposed smart temperature sensor eliminates the explicit bandgap reference and only requires the ratio of two diode voltages to obtain ratiometric temperature measurements. The temperature sensor is implemented with a simple time-domain architecture, resulting in low power consumption and small chip area. Fabricated in a PDSOI CMOS process, the proposed smart temperature sensor achieves an accuracy of 2°C over 25°C-225°C and consumes only 25-μA current under a 4.5-V supply with a chip area of 0.45mm2.
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一个时域智能温度传感器,没有明确的带隙参考,在SOI CMOS工作高达225°C
本文介绍了一种智能温度传感器,工作温度范围为25°C-225°C。提出的智能温度传感器消除了显式带隙参考,只需要两个二极管电压的比率就可以获得比率温度测量。该温度传感器采用简单的时域结构,功耗低,芯片面积小。该智能温度传感器采用PDSOI CMOS工艺制造,在25°C-225°C范围内的精度为2°C,在4.5 v电源下功耗仅为25 μ a,芯片面积为0.45mm2。
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