CR018 Wideband Noise Model for AMS/RF CMOS Simulation

Abstract

The experimental verification of CR018 wideband noise model for AMS/RF CMOS simulation was achieved using the BSIM3v3 flicker noise model, SPICE2 thermal noise model, and induced gate and bulk noises as well. Among which, independent flicker noise corner model scaling with device size was developed to enable low power design. Moreover, the corner frequency was measured experimentally and validated with model simulation. As to the high frequency thermal noise model, we measured the noise figure with varying gate length and compared with model simulations of SPICE2 and BSIM3v3. A good fit of SPICE2 is achieved using a theoretical value of gamma=2/3 even for the shortest channel length of 0.1 Sum. An effective gamma less than 2/3 derived from BSIM3v3 was obtained. In addition, we observed that the induced gate and bulk noises are important in high frequency as the device sized up. Finally, we sanity checked the developed wideband noise model with switched capacitor and VCO phase noise.