System-level design hardening based on worst-case ASET simulations

Y. Boulghassoul, P. Adell, J. Rowe, L. Massengill, peixiong zhao, A. Sternberg
{"title":"System-level design hardening based on worst-case ASET simulations","authors":"Y. Boulghassoul, P. Adell, J. Rowe, L. Massengill, peixiong zhao, A. Sternberg","doi":"10.1109/TNS.2004.835091","DOIUrl":null,"url":null,"abstract":"We present experimental and simulation results on single-event transients in an analog subsystem for satellite electronic equipment. Investigations based on worst-case transient events, simulated with transistor-level circuit models, suggest design modifications for hardening.","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TNS.2004.835091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

We present experimental and simulation results on single-event transients in an analog subsystem for satellite electronic equipment. Investigations based on worst-case transient events, simulated with transistor-level circuit models, suggest design modifications for hardening.
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基于最坏情况ASET模拟的系统级设计强化
本文介绍了卫星电子设备模拟子系统中单事件瞬态的实验和仿真结果。基于最坏情况瞬态事件的调查,用晶体管级电路模型模拟,建议设计修改硬化。
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