S. Khanna, D. Estan, L. Erhardt, A. Houdayer, C. Carlone, A. lonascut Nedelcescu, S. Messenger, R. Walters, G.P. Surnmers, J. Warner, I. Jun
Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at fluences varying from 1/spl times/10/sup 11/ to 1/spl times/10/sup 15/ cm/sup -2/. Light output degradation curves were obtained for each energy and the damage constant (A) associated with these curves was determined according to the theory of Rose and Barnes. For proton energies less than 10 MeV, A varies inversely with the proton energy (E). At higher energies, A is consistently above the 1/E relationship. The change in nature of the energy dependence is attributed to nuclear interactions. Nonionizing energy loss calculations for the case of protons on GaN are presented. Good agreement between theory and experiment is obtained.
{"title":"Proton energy dependence of the light output in gallium nitride light emitting diodes","authors":"S. Khanna, D. Estan, L. Erhardt, A. Houdayer, C. Carlone, A. lonascut Nedelcescu, S. Messenger, R. Walters, G.P. Surnmers, J. Warner, I. Jun","doi":"10.1109/TNS.2004.835097","DOIUrl":"https://doi.org/10.1109/TNS.2004.835097","url":null,"abstract":"Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at fluences varying from 1/spl times/10/sup 11/ to 1/spl times/10/sup 15/ cm/sup -2/. Light output degradation curves were obtained for each energy and the damage constant (A) associated with these curves was determined according to the theory of Rose and Barnes. For proton energies less than 10 MeV, A varies inversely with the proton energy (E). At higher energies, A is consistently above the 1/E relationship. The change in nature of the energy dependence is attributed to nuclear interactions. Nonionizing energy loss calculations for the case of protons on GaN are presented. Good agreement between theory and experiment is obtained.","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132720502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"RADECS 2003 Conference Overview","authors":"R. RalfdeMarino, R. RenoHarboeSorensen","doi":"10.1109/TNS.2004.837949","DOIUrl":"https://doi.org/10.1109/TNS.2004.837949","url":null,"abstract":"","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127883159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Onoda, T. Hirao, J. S. Laird, T. Wakasa, T. Yamakawa, T. Okamoto, Y. Koizumi, T. Kamiya
High-energy protons induce Single Event Transient (SET) currents that trigger bit errors in optical data links used in radiation environments. Here, Monte Carlo modeling and the Evaluated Nuclear Data Format (ENDF) database library were combined to develop an approach for estimating proton induced SET currents in photodiodes. Modeling of the SET current distribution induced in a Si pin photodiode is compared to charge collection data measured in the laboratory. In this paper, we discuss the basic methodology of the approach and comment on any differences noted between theory and experiment.
{"title":"Development of monte carlo modeling for proton induced charge in si pin photodiode","authors":"S. Onoda, T. Hirao, J. S. Laird, T. Wakasa, T. Yamakawa, T. Okamoto, Y. Koizumi, T. Kamiya","doi":"10.1109/TNS.2004.835110","DOIUrl":"https://doi.org/10.1109/TNS.2004.835110","url":null,"abstract":"High-energy protons induce Single Event Transient (SET) currents that trigger bit errors in optical data links used in radiation environments. Here, Monte Carlo modeling and the Evaluated Nuclear Data Format (ENDF) database library were combined to develop an approach for estimating proton induced SET currents in photodiodes. Modeling of the SET current distribution induced in a Si pin photodiode is compared to charge collection data measured in the laboratory. In this paper, we discuss the basic methodology of the approach and comment on any differences noted between theory and experiment.","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130860221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Boulghassoul, P. Adell, J. Rowe, L. Massengill, peixiong zhao, A. Sternberg
We present experimental and simulation results on single-event transients in an analog subsystem for satellite electronic equipment. Investigations based on worst-case transient events, simulated with transistor-level circuit models, suggest design modifications for hardening.
{"title":"System-level design hardening based on worst-case ASET simulations","authors":"Y. Boulghassoul, P. Adell, J. Rowe, L. Massengill, peixiong zhao, A. Sternberg","doi":"10.1109/TNS.2004.835091","DOIUrl":"https://doi.org/10.1109/TNS.2004.835091","url":null,"abstract":"We present experimental and simulation results on single-event transients in an analog subsystem for satellite electronic equipment. Investigations based on worst-case transient events, simulated with transistor-level circuit models, suggest design modifications for hardening.","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126547327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-01DOI: 10.1016/J.NIMB.2004.01.141
M. Nakabayashi, H. Ohyama, N. Hanano, T. Kamiya, T. Hirao, E. Simoen, C. Claeys
{"title":"A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures","authors":"M. Nakabayashi, H. Ohyama, N. Hanano, T. Kamiya, T. Hirao, E. Simoen, C. Claeys","doi":"10.1016/J.NIMB.2004.01.141","DOIUrl":"https://doi.org/10.1016/J.NIMB.2004.01.141","url":null,"abstract":"","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133844544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electron multiplying charge coupled devices (EMCCDs) utilize impact ionization to achieve subelectron noise up to video frame rates and above. This paper describes the effects of Co/sup 60/ irradiation on device performance parameters including the dark signal, charge transfer and multiplication gain. Devices were irradiated with different ionizing doses, and biases chosen to simulate operating conditions. The 'global' threshold voltage shift was measured to be around 0.14 V/krad (Si) for all devices. However, the multiplication gain was unchanged by the irradiation. The radiation-induced multiplication register component of dark signal was found to be an order of magnitude larger than that from the image section at room temperature, and to have lower temperature dependence.
{"title":"The effects of Co/sup 60/ gamma radiation on electron multiplying charge coupled devices","authors":"B. Hadwen, M.A. Camas, M. Robbins","doi":"10.1109/TNS.2004.835099","DOIUrl":"https://doi.org/10.1109/TNS.2004.835099","url":null,"abstract":"Electron multiplying charge coupled devices (EMCCDs) utilize impact ionization to achieve subelectron noise up to video frame rates and above. This paper describes the effects of Co/sup 60/ irradiation on device performance parameters including the dark signal, charge transfer and multiplication gain. Devices were irradiated with different ionizing doses, and biases chosen to simulate operating conditions. The 'global' threshold voltage shift was measured to be around 0.14 V/krad (Si) for all devices. However, the multiplication gain was unchanged by the irradiation. The radiation-induced multiplication register component of dark signal was found to be an order of magnitude larger than that from the image section at room temperature, and to have lower temperature dependence.","PeriodicalId":329028,"journal":{"name":"Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116516658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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