Q. Fareed, R. Jain, R. Gaska, G. Tamulaitis, I. Yilmaz, M. Shur, E. Kuokštis, A. Khan
{"title":"Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates","authors":"Q. Fareed, R. Jain, R. Gaska, G. Tamulaitis, I. Yilmaz, M. Shur, E. Kuokštis, A. Khan","doi":"10.1109/ISDRS.2003.1272005","DOIUrl":null,"url":null,"abstract":"We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.
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