An expert system for process monitoring, diagnostics and control (VLSI and ULSI circuits)

Abstract

An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed.<>