{"title":"Optimization of LPCVD silicon nitride deposition process by use of designed experiments","authors":"G. Depinto, J. Wilson","doi":"10.1109/ASMC.1990.111207","DOIUrl":null,"url":null,"abstract":"A low-pressure chemical-vapor-deposition (LPCVD) nitride process that was characterized for film uniformity and particle density is described. The appropriate factors and levels for an optimization experiment were established. A full factorial experiment and a Taguchi orthogonal array were selected. A confirmation run was processed to verify the optimum factor level settings from two design methodologies. SPC methods, (as measured by C/sub p/) were used to measure an overall process improvement for film uniformity. Particle trends for the implemented process are compared to particle trends on a previously used process.<<ETX>>","PeriodicalId":158760,"journal":{"name":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1990.111207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A low-pressure chemical-vapor-deposition (LPCVD) nitride process that was characterized for film uniformity and particle density is described. The appropriate factors and levels for an optimization experiment were established. A full factorial experiment and a Taguchi orthogonal array were selected. A confirmation run was processed to verify the optimum factor level settings from two design methodologies. SPC methods, (as measured by C/sub p/) were used to measure an overall process improvement for film uniformity. Particle trends for the implemented process are compared to particle trends on a previously used process.<>
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