Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306860

C. Uang, H. Chuang, T. Shen -Fu, K. Thei, P. Lai, S. Fu, Y. Tsai, Wen-Chau Liu

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引用次数: 3

Abstract

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18 /spl mu/m CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R/sub bulk/) and interface resistance (R/sub interface/) are obtained at different temperature. For diffused resistors, the R/sub bulk/ and R/sub interface/, values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of RNA are found in n/sup +/ and p/sup +/ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

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用于ULSI应用的扩散和多晶硅电阻器的温度依赖特性

研究了多晶硅和扩散电阻器的温度依赖特性。采用0.18 /spl mu/m CMOS工艺，采用水化钴工艺，在电阻器两端形成硅化物。基于一个简单实用的模型，得到了电阻在不同温度下的一些重要参数，包括块片电阻(R/亚块/)和界面电阻(R/亚界面/)。对于扩散电阻器，R/亚体积/和R/亚接口/分别随温度的升高而增大和减小。观察到电阻温度系数(TCR)为正值。此外，TCR值随电阻器尺寸的减小而减小。对于多晶硅电阻器，Rinterface值随温度的升高而减小。另外，在n/sup +/和p/sup +/多晶硅电阻器中，RNA的TCR值分别为负和正。通过对扩散电阻器和多晶硅电阻器的比较，发现电阻器尺寸越小，TCR越负。

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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