Controlling Structure and Transport in Halide Perovskite Films Using Chemical Vapor Deposition

S. Guha, Randy Burns, S. Ngqoloda, C. Arendse
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Abstract

No other semiconductor has shown such a rapid increase in solar cell power conversion efficiencies over a period of 10 years as the organic-inorganic hybrid perovskites. Chemical vapor deposition (CVD), a low-cost and a scalable deposition technique, allows the growth of perovskite thin films without the use of solvents. We will discuss a two-step CVD technique that yields air-stable methylammonium (MA) lead iodide and mixed halide films, while also inducing the stable cubic phase at room temperature and at pressures as low as 0.25 GPa. Temperature and pressure-dependent synchrotron-based x-ray diffraction studies from MA lead iodide and mixed halide films will be presented, and these results will be further correlated with transport properties.
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化学气相沉积法控制卤化物钙钛矿薄膜的结构和输运
没有其他半导体能像有机-无机杂化钙钛矿那样,在10年的时间里迅速提高太阳能电池的转换效率。化学气相沉积(CVD)是一种低成本、可扩展的沉积技术,可以在不使用溶剂的情况下生长钙钛矿薄膜。我们将讨论一种两步CVD技术,该技术可以产生空气稳定的甲基铵(MA)碘化铅和混合卤化物薄膜,同时还可以在室温和低至0.25 GPa的压力下诱导稳定的立方相。将介绍基于同步加速器的MA碘化铅和混合卤化物薄膜的温度和压力相关x射线衍射研究,这些结果将进一步与输运性质相关。
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