{"title":"A New Model for Light Output Degradation of Direct Band Gap Emitters","authors":"P. F. Lindquist","doi":"10.1109/IRPS.1980.362931","DOIUrl":null,"url":null,"abstract":"A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.
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