EBIC investigation of edge termination techniques for silicon carbide power devices

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509460

R. Raghunathan, B. J. Baliga

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引用次数: 10

Abstract

Various edge termination techniques for silicon carbide power devices were investigated for their effectiveness in improving the breakdown characteristics using the Scanning Electron Microscope (SEM) in the Electron Beam Induced Current (EBIC) mode. This paper reports an EBIC analysis of the experimentally obtained results for three termination techniques: (a) Floating Metal field Ring (FMR) (b) REsistive Schottky barrier field Plate (RESP) (c) Argon Ion Implant termination. Argon Ion Implant termination was found to be most effective in spreading the depletion boundary at the surface. EBIC analysis on the RESP terminated diodes revealed that insufficient sheet resistance of the RESP layer caused an early breakdown in these diodes. FMR terminated diodes exhibited spreading of the depletion region beyond that indicated by numerical simulations without surface charge. Simulations performed to study the effect of negative surface charge indicate that a charge density of more than 1/spl times/10/sup 11/ cm/sup -2/ was required to cause substantial spreading of the depletion edge.

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碳化硅功率器件边缘终端技术的EBIC研究

利用电子束感应电流(EBIC)模式下的扫描电子显微镜(SEM)，研究了碳化硅功率器件的各种边缘终止技术在改善击穿特性方面的有效性。本文报道了三种终端技术实验结果的EBIC分析:(a)浮动金属场环(FMR) (b)电阻肖特基势垒场板(RESP) (c)氩离子植入终端。研究发现，氩离子注入终止对扩展表面耗尽边界最为有效。对RESP端接二极管的EBIC分析表明，RESP层的片电阻不足导致这些二极管早期击穿。在没有表面电荷的情况下，FMR端接二极管显示出超出数值模拟的耗尽区扩展。研究表面负电荷效应的模拟表明，电荷密度必须大于1/spl乘以/10/sup 11/ cm/sup -2/，才能引起耗尽边的大幅扩展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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