GaN based high brightness LEDs and UV LEDs

S. Denbaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, S. Nakamura
{"title":"GaN based high brightness LEDs and UV LEDs","authors":"S. Denbaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, S. Nakamura","doi":"10.1109/IEDM.2003.1269304","DOIUrl":null,"url":null,"abstract":"This talk summarizes the important materials and device results in gallium nitride based light emitter technology. GaN has emerged as the most promising material for high brightness LEDs with colors ranging from UV to blue, green, and white. Recent progress on ultra-violet (UV) emitting LEDs using AlGaN single quantum wells indicates wavelengths as short as 292 nm are achievable. UV LEDs are of great interest for solid state white lighting due to the high conversion efficiencies of typical phosphors in the UV spectrum. This paper focuses on recent progress in improving the properties of UV LEDs.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This talk summarizes the important materials and device results in gallium nitride based light emitter technology. GaN has emerged as the most promising material for high brightness LEDs with colors ranging from UV to blue, green, and white. Recent progress on ultra-violet (UV) emitting LEDs using AlGaN single quantum wells indicates wavelengths as short as 292 nm are achievable. UV LEDs are of great interest for solid state white lighting due to the high conversion efficiencies of typical phosphors in the UV spectrum. This paper focuses on recent progress in improving the properties of UV LEDs.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于氮化镓的高亮度led和UV led
本文综述了氮化镓基光发射器技术中重要的材料和器件成果。GaN已成为高亮度led的最有前途的材料,其颜色范围从UV到蓝色,绿色和白色。使用AlGaN单量子阱的紫外线发光led的最新进展表明,波长短至292nm是可以实现的。由于紫外光谱中典型荧光粉的高转换效率,紫外led对固态白色照明非常感兴趣。本文重点介绍了近年来在提高紫外发光二极管性能方面的研究进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Statistical simulations to inspect and predict data retention and program disturbs in flash memories Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes An 8F/sup 2/ MRAM technology using modified metal lines
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1