Reliability test and failure analysis of optical MEMS

P. Durr, U. Dauderstadt, D. Kunze, M. Auvert, H. Lakner
{"title":"Reliability test and failure analysis of optical MEMS","authors":"P. Durr, U. Dauderstadt, D. Kunze, M. Auvert, H. Lakner","doi":"10.1109/IPFA.2002.1025660","DOIUrl":null,"url":null,"abstract":"Modern UV-lithography is searching for new highly parallel writing concepts. Spatial light modulation (SLM) with optical MEMS devices offers such possibilities. Special emphasis must be put on the ability of SLM devices to handle ultraviolet light (UV). For deep UV laser mask writing (248 nm) we designed and fabricated a 2048/spl times/512 pixel optical MEMS with individually addressable aluminum micro-mirrors. In order to support the small volume production and the qualification of such devices we have set up test and characterization systems for failure analysis and lifetime testing. In order to ensure a high quality of the optical MEMS e.g. a map of the device under test is needed showing the exact position of defective pixels together with the type of defect like not responding, always deflected, wrong spring constant, or poorly reflecting surface. Additionally information on the flatness of the mirrors and on their lifetime under UV pulsed illumination are required. This paper describes the concepts of our test systems, their experimental realization, and results obtained for our optical MEMS chips.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Modern UV-lithography is searching for new highly parallel writing concepts. Spatial light modulation (SLM) with optical MEMS devices offers such possibilities. Special emphasis must be put on the ability of SLM devices to handle ultraviolet light (UV). For deep UV laser mask writing (248 nm) we designed and fabricated a 2048/spl times/512 pixel optical MEMS with individually addressable aluminum micro-mirrors. In order to support the small volume production and the qualification of such devices we have set up test and characterization systems for failure analysis and lifetime testing. In order to ensure a high quality of the optical MEMS e.g. a map of the device under test is needed showing the exact position of defective pixels together with the type of defect like not responding, always deflected, wrong spring constant, or poorly reflecting surface. Additionally information on the flatness of the mirrors and on their lifetime under UV pulsed illumination are required. This paper describes the concepts of our test systems, their experimental realization, and results obtained for our optical MEMS chips.
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光学MEMS的可靠性测试与失效分析
现代uv光刻正在寻求新的高度平行的书写概念。空间光调制(SLM)与光学MEMS器件提供了这样的可能性。必须特别强调SLM器件处理紫外线(UV)的能力。为实现深紫外激光掩模写入(248 nm),我们设计并制造了2048/spl倍/512像素的光学MEMS,该MEMS具有可单独寻址的铝微镜。为了支持此类设备的小批量生产和鉴定,我们建立了测试和表征系统,用于故障分析和寿命测试。为了确保光学MEMS的高质量,例如,被测器件的地图需要显示缺陷像素的确切位置以及缺陷类型,如不响应、总是偏转、错误的弹簧常数或反射表面差。此外,还需要有关反射镜的平整度及其在紫外线脉冲照射下的寿命的信息。本文介绍了我们的测试系统的概念、实验实现以及我们的光学MEMS芯片的测试结果。
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