{"title":"High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices","authors":"H. Funaki, N. Yasuhara, A. Nakagawa","doi":"10.1109/ISPSD.1996.509458","DOIUrl":null,"url":null,"abstract":"A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed.