Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Abstract

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH/sub 4/) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.<>