H. Itoh, T. Saitoh, T. Yamada, M. Yamamoto, A. Masaki
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引用次数: 16
Abstract
Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.<>
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