Very high performance GaN-on-GaN diodes

Abstract

Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for on-state resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching transients (5-25A) indicates the lack of minority carrier storage and low capacitances resulting in very low switching losses for the devices.