Modelling of printable metal-oxide TFTs for circuit simulation

Abstract

This paper focuses on circuit simulation for thin film transistors that can be based on organic or inorganic metal-oxide materials and fabricated using solution processing such as printing or using the more conventional methods such as sputtering. In particular, the paper focuses on solution processed metal oxides. Existing compact device models are generalized in the article to include AC properties and statistical variations. Simulation results for a four-transistor flip-flop circuit are compared against measured characteristics to verify model predictions. The simulation tools will serve in building more complicated analogue and digital printed circuits.