{"title":"Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail?","authors":"D. Bimberg, T. Mikolajick, X. Wallart","doi":"10.1109/NVMTS47818.2019.8986178","DOIUrl":null,"url":null,"abstract":"The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.","PeriodicalId":199112,"journal":{"name":"2019 19th Non-Volatile Memory Technology Symposium (NVMTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th Non-Volatile Memory Technology Symposium (NVMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS47818.2019.8986178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.
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